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| Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 5, 4/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 800 to 2200 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 800 - 2200 MHz * P1dB: 30 dBm @ 2140 MHz * Small - Signal Gain: 15 dB @ 2140 MHz * Third Order Output Intercept Point: 47 dBm @ 2140 MHz * Single 5 Volt Supply * Internally Prematched to 50 Ohms * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. MMG3005NT1 800 - 2200 MHz, 15 dB 30 dBm InGaP HBT CASE 1543 - 03 PQFN 5x5 PLASTIC Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 18.5 - 14 - 12 30 47 1960 MHz 15.5 - 10 -7 30 47 2140 MHz 15 - 11 -7 30 47 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDC IDC Pin Tstg TJ Value 6 600 18 - 65 to +150 150 Unit V mA dBm C C 2. For reliable operation, the junction temperature should not exceed 150C. 1. VDC = 5 Vdc, TC = 25C, 50 ohm system Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 480 mA, TC = 25C) Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 21.5 Unit C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3005NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF IDC VDC Min 14 -- -- -- -- -- 420 -- Typ 15 - 11 -7 30 47 5 480 5 Max -- -- -- -- -- -- 520 -- Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150C. MMG3005NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Name RFin RFout/ VCC VCC VBA GND Pin Number 3, 4 10, 11, 12 14 16 Backside Center Metal Description VBA RF input for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. Collector voltage supply. Bias voltage supply. The center metal base of the PQFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. RFin RFin 1 2 3 4 5 6 7 8 16 15 VCC 14 13 12 11 10 9 RFout/VCC RFout/VCC RFout/VCC (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C MMG3005NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 600 ICC, COLLECTOR CURRENT (mA) 106 480 MTTF (YEARS) VCC = 5 Vdc 0 0 1 2 3 4 5 VBA, BIAS VOLTAGE (V) 103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 480 mA 105 360 240 104 120 Figure 2. Collector Current versus Bias Voltage Figure 3. MTTF versus Junction Temperature MMG3005NT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R2 R1 C3 C4 1 16 15 14 13 12 Z4 3 11 DUT 6 7 8 10 9 Z5 L1 C5 C6 RF INPUT 2 Z1 C1 Z2 Z3 C7 Current Mirror Z6 C8 C2 Z7 RF OUTPUT 4 5 Z1, Z7 Z2, Z6 Z3 0.140 x 0.028 Microstrip 0.057 x 0.028 Microstrip 0.342 x 0.028 Microstrip Z4 Z5 PCB 0.119 x 0.028 Microstrip 0.223 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 4. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3, C5 C4, C6 C7 C8 L1 R1 R2 Description 15 pF Chip Capacitors 0.01 F Chip Capacitors 0.1 F Chip Capacitors 6.8 pF Chip Capacitor 5.6 pF Chip Capacitor 15 nH Chip Inductor 33 W, 1/10 W Chip Resistor 0 W, 1/10 W Chip Resistor Part Number ECUV1H150JCV C0603C103J5RAC C0603C104J5RAC 06035J6R8BS 06035J5R6BS 1008CS - 150XJB CRCW060333R0FKEA CRCW06030000FKEA Manufacturer Panasonic Kemet Kemet AVX AVX Coilcraft Vishay Vishay MMG3005NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY R2 R1 C3 C4 RFin C5 C6 L1 RFout C1 C7 C8 C2 MMG3004/5 Rev 3 Figure 5. 50 Ohm Test Circuit Component Layout MMG3005NT1 6 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 20 Gp, SMALL-SIGNAL GAIN (dB) -10 IRL, INPUT RETURN LOSS (dB) 19 TC = -40C -11 18 85C 25C -12 85C -13 25C -14 VDC = 5 Vdc TC = -40C 17 16 VDC = 5 Vdc 15 840 870 900 f, FREQUENCY (MHz) 930 960 -15 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 6. Small - Signal Gain (S21) versus Frequency Figure 7. Input Return Loss (S11) versus Frequency -5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 32 -7 31 TC = -40C 30 85C 29 VDC = 5 Vdc 28 840 870 900 f, FREQUENCY (MHz) 930 960 25C -9 TC = -40C -11 -13 VDC = 5 Vdc -15 840 870 900 85C 25C 930 960 f, FREQUENCY (MHz) Figure 8. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 10 Figure 9. P1dB versus Frequency 48 TC = -40C NF, NOISE FIGURE (dB) 25C 85C 8 TC = 85C 6 -40C 4 25C 46 44 42 VDC = 5 Vdc 1 MHz Tone Spacing 40 840 870 900 f, FREQUENCY (MHz) 930 960 2 VDC = 5 Vdc 0 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency MMG3005NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS: 900 MHz -35 VDC = 5 Vdc, f = 900 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -40 -40 -50 VDC = 5 Vdc, f = 900 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth -45 TC = -40C -50 85C -55 24 -60 TC = 85C -70 25C -80 19 -40C 21 23 25 27 29 25C 25 26 27 28 29 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 12. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 13. IS - 95 Adjacent Channel Power Ratio versus Output Power MMG3005NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1800 - 2200 MHz VSUPPLY R2 R1 C3 C4 1 16 15 14 13 12 Z4 3 11 DUT 6 7 8 10 9 Z5 Z6 PCB 0.075 x 0.028 Microstrip 0.280 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 C8 Z5 Z6 L1 C5 C6 RF INPUT 2 Z1 C1 Z2 Z3 C7 Current Mirror Z7 C2 RF OUTPUT 4 5 Z1, Z7 Z2 Z3 Z4 0.140 0.269 0.130 0.044 x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip x 0.028 Microstrip Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1 C2 C3, C5 C4, C6 C7 C8 L1 R1 R2 Description 15 pF Chip Capacitor 1.8 pF Chip Capacitor 0.01 F Chip Capacitors 0.1 F Chip Capacitors 2.7 pF Chip Capacitor 1.2 pF Chip Capacitor 15 nH Chip Inductor 33 W, 1/10 W Chip Resistor 0 W, 1/10 W Chip Resistor Part Number ECUV1H150JCV 06035J1R8BS C0603C103J5RAC C0603C104J5RAC 06035J2R7BS 06035J1R2BS 1008CS - 150XJB CRCW060333R0FKEA CRCW06030000FKEA Manufacturer Panasonic AVX Kemet Kemet AVX AVX Coilcraft Vishay Vishay MMG3005NT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 1800 - 2200 MHz VBA VSUPPLY R2 R1 C3 C4 RFin C5 C6 L1 RFout C1 C7 C8 C2 MMG3004/5 Rev 3 Figure 15. 50 Ohm Test Circuit Component Layout MMG3005NT1 10 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1800 - 2200 MHz 18 Gp, SMALL-SIGNAL GAIN (dB) 17 16 15 85C 14 13 VDC = 5 Vdc 12 1900 1960 2020 2080 2140 2200 -20 1900 1960 2020 2080 f, FREQUENCY (MHz) 2140 2200 25C TC = -40C -5 IRL, INPUT RETURN LOSS (dB) -10 TC = -40C 25C 85C -15 VDC = 5 Vdc f, FREQUENCY (MHz) Figure 16. Small - Signal Gain (S21) versus Frequency Figure 17. Input Return Loss (S11) versus Frequency 0 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 32 -2 31 TC = -40C 25C 30 85C 29 VDC = 5 Vdc 28 1900 1960 2020 2080 2140 2200 -4 TC = -40C -6 -8 VDC = 5 Vdc -10 1900 1960 2020 85C 25C 2080 2140 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 18. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 10 Figure 19. P1dB versus Frequency 48 TC = -40C 25C 85C NF, NOISE FIGURE (dB) 8 TC = 85C 46 6 44 4 -40C 25C 42 VDC = 5 Vdc 1 MHz Tone Spacing 40 1900 1960 2020 2080 2140 2200 2 VDC = 5 Vdc 0 1900 1960 2020 2080 2140 2200 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point versus Frequency Figure 21. Noise Figure versus Frequency MMG3005NT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 1800 - 2200 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -35 VDC = 5 Vdc, f = 1960 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -40 -40 -50 VDC = 5 Vdc, f = 1960 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth -45 25C TC = 85C -50 -40C -60 TC = 85C -40C -80 19 25C -70 -55 24 25 26 27 28 29 21 23 25 27 29 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 22. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 23. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -20 -30 TC = 85C 25C -40C -50 -40 -60 -70 18 VDC = 5 Vdc, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 24. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3005NT1 12 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 480 mA, TC = 255C, 50 Ohm System) f MHz 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 S11 |S11| 0.70575 0.73140 0.75442 0.77553 0.79364 0.80933 0.82301 0.83429 0.84357 0.85132 0.85696 0.86176 0.86572 0.86813 0.86945 0.86974 0.86842 0.86533 0.86095 0.85480 0.84684 0.83707 0.82469 0.80971 0.79087 0.76847 0.74126 0.70933 0.67261 0.63202 0.59058 0.55219 0.53906 0.55077 0.58350 0.63044 0.68283 0.73327 0.77875 0.81666 0.84807 0.87279 0.89261 0.90758 0.91984 - 173.81 - 174.91 - 176.26 - 177.67 - 179.04 179.58 178.27 177.07 175.98 174.99 174.16 173.35 172.60 171.85 171.15 170.42 169.66 168.91 168.14 167.25 166.25 165.18 164.00 162.76 161.42 160.03 158.60 157.30 156.25 155.73 156.13 157.76 175.46 - 178.72 - 174.08 - 171.29 - 170.32 - 170.78 - 172.14 - 174.06 - 176.25 - 178.55 179.07 176.70 174.31 |S21| 5.06022 4.79122 4.52885 4.27831 4.03762 3.82617 3.62033 3.43310 3.26377 3.10735 2.96322 2.82568 2.70160 2.60468 2.53732 2.48944 2.45821 2.44429 2.44811 2.46595 2.49650 2.54318 2.60413 2.68767 2.79189 2.91082 3.04944 3.20126 3.36356 3.53052 3.69596 3.84647 3.84639 3.76728 3.61364 3.40538 3.15278 2.87824 2.60183 2.33461 2.08577 1.85911 1.65704 1.47812 1.32091 S21 143.91 137.40 131.51 126.11 121.18 116.75 112.46 108.55 104.82 101.29 97.96 94.86 92.31 90.11 88.04 85.86 83.61 81.27 78.81 76.18 73.39 70.39 67.17 63.69 59.73 55.24 50.25 44.67 38.42 31.45 23.72 15.21 5.98 - 3.57 - 13.31 - 22.98 - 32.28 - 41.07 - 49.24 - 56.78 - 63.69 - 70.01 - 75.82 - 81.19 - 86.22 |S12| 0.00976 0.00866 0.00773 0.00689 0.00618 0.00565 0.00523 0.00494 0.00478 0.00468 0.00459 0.00454 0.00452 0.00455 0.00475 0.00498 0.00517 0.00537 0.00562 0.00589 0.00614 0.00639 0.00664 0.00686 0.00707 0.00723 0.00735 0.00737 0.00727 0.00702 0.00657 0.00592 0.00493 0.00394 0.00325 0.00325 0.00389 0.00480 0.00576 0.00658 0.00728 0.00782 0.00823 0.00851 0.00868 S12 - 49.75 - 46.60 - 43.76 - 40.58 - 36.61 - 31.68 - 26.34 - 20.59 - 15.13 - 10.28 - 5.76 - 1.51 3.52 7.99 12.64 15.23 16.96 18.37 19.48 19.73 19.47 18.66 17.14 15.10 12.45 8.99 4.62 - 0.89 - 7.59 - 15.85 - 25.99 - 38.78 - 55.47 - 78.20 - 110.26 - 147.37 - 177.72 161.34 146.52 135.49 126.95 120.20 114.85 110.74 107.68 |S22| 0.84913 0.84273 0.83759 0.83409 0.83042 0.83214 0.83079 0.82956 0.82812 0.82590 0.82489 0.82589 0.82783 0.83010 0.83192 0.83202 0.83128 0.82923 0.82679 0.82313 0.81800 0.81154 0.80396 0.79812 0.79179 0.78258 0.77256 0.76200 0.75243 0.74435 0.73950 0.73766 0.74863 0.76239 0.77658 0.78891 0.79795 0.80422 0.80618 0.80601 0.80299 0.79865 0.79341 0.78715 0.78067 S22 174.65 173.16 172.12 171.28 170.63 170.43 169.99 169.83 169.78 169.86 170.15 170.57 171.07 171.50 172.00 172.45 172.96 173.50 174.01 174.63 175.29 176.08 176.98 177.98 178.83 179.68 - 179.28 - 178.18 - 176.93 - 175.63 - 174.33 - 173.25 173.64 172.14 170.13 167.72 164.96 162.03 159.04 156.02 153.08 150.21 147.45 144.80 142.25 (continued) MMG3005NT1 RF Device Data Freescale Semiconductor 13 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 480 mA, TC = 255C, 50 Ohm System) (continued) f MHz 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 S11 |S11| 0.92917 0.93606 0.94249 0.94659 0.95002 0.95243 0.95418 0.95534 0.95570 0.95565 0.95487 171.99 169.65 167.38 165.17 163.00 160.86 158.70 156.67 154.64 152.68 150.86 |S21| 1.18240 1.06136 0.95471 0.86109 0.77869 0.70576 0.64070 0.58229 0.52887 0.47907 0.43144 S21 - 90.93 - 95.41 - 99.69 - 103.83 - 107.89 - 111.91 - 115.96 - 120.08 - 124.40 - 128.91 - 133.65 |S12| 0.00876 0.00878 0.00880 0.00882 0.00894 0.00932 0.01006 0.01141 0.01358 0.01662 0.02061 S12 105.84 105.17 105.76 107.70 111.20 116.13 121.98 127.95 132.34 134.33 133.72 |S22| 0.77298 0.76528 0.75557 0.74569 0.73387 0.72034 0.70405 0.68401 0.65990 0.63014 0.59605 S22 139.76 137.41 135.15 132.95 130.86 128.82 126.97 125.22 123.77 122.76 122.51 MMG3005NT1 14 RF Device Data Freescale Semiconductor 2.2 x 2.2 1.35 0.6 2.6 0.8 5.3 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES. Figure 25. Recommended Mounting Configuration MMG3005NT1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS MMG3005NT1 16 RF Device Data Freescale Semiconductor MMG3005NT1 RF Device Data Freescale Semiconductor 17 MMG3005NT1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 3 Date Mar. 2007 Description * Replaced Case Outline 1543 - 02 with updated 1543 - 03, Issue C, p. 1, 16 - 18 * Added VCC callout to Pin Connections 10, 11, and 12 in Fig. 1, Pin Connections, p. 3 * Updated Part Numbers in Table 8, Component Designations and Values, 900 MHz, to RoHS compliant part numbers, p. 5 * Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 5, 50 Ohm Test Circuit Component Layout, 900 MHz, p. 6 * Removed IDC value due to its variability over temperature, Figs. 12 - 13, IS - 95 Adjacent Channel Power Ratio versus Output Power, 900 MHz, p. 8 * Updated Part Numbers in Table 9, Component Designations and Values, 1800 - 2200 MHz, to RoHS compliant part numbers, p. 9 * Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 15, 50 Ohm Test Circuit Component Layout, 1800 - 2200 MHz, p. 10 * Removed IDC value due to its variability over temperature, Figs. 22 - 23, IS - 95 Adjacent Channel Power Ratio versus Output Power, 1800 - 2200 MHz, and Fig. 24, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power, 1800 - 2200 MHz, p. 12 * Added Product Documentation and Revision History, p. 19 4 Feb. 2008 * Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Changed Table 4, Electrical Characteristics Supply Current Min value from 455 mA to 420 mA, p. 2 * Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 13, 14 5 Apr. 2008 * Corrected Tape and Reel information from 12 mm, 7 inch Reel to 16 mm, 13 inch Reel, p. 1 * Corrected Fig. 24, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 12 MMG3005NT1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MMG3005NT1 Rev. 20 5, 4/2008 Document Number: MMG3005NT1 RF Device Data Freescale Semiconductor |
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